Browsing by Subject "Band structure"

Now showing items 1-8 of 8

    • Article  

      Ab-initio electronic structure calculations and properties of [SixSn1 − x]3N4 ternary nitrides 

      Pavloudis, T.; Zervos, Matthew; Komninou, P.; Kioseoglou, J. (2016)
      We carry out ab initio electronic structure calculations of (SixSn1 − x)3N4 using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically ...
    • Article  

      Large ultrafast optical nonlinearities in As-rich GaAs 

      Benjamin, S. D.; Othonos, Andreas S.; Smith, P. W. E. (1994)
      The measurement of large Ultrafast bandgap-resonant optical nonlinearities in As-rich samples of GaAs that have been grown at low temperatures is reported. Light-induced refractive index changes of magnitude greater than ...
    • Article  

      Minority-spin band parameters in a NiMnSb thin film determined by spectral conductivity 

      Grigorescu, C. E. A.; Trodahl, H. J.; Strickland, N. M.; Bittar, A.; Manea, S. A.; Giapintzakis, John; Monnereau, O.; Notonier, R.; Kennedy, V. J. (2004)
      NiMnSb is expected to be a ferromagnetic half metal, an expectation that is based in part on band structure calculations. Here we report optical conductivity studies of the band structure for a film prepared by pulsed laser ...
    • Article  

      Pulsed-laser deposition of NiMnSb thin films at moderate temperatures 

      Giapintzakis, John; Grigorescu, C.; Klini, A.; Manousaki, A.; Zorba, V.; Androulakis, J.; Viskadourakis, Z.; Fotakis, C. (2002)
      Thin films of the half-Heusler alloy NiMnSb, which is predicted by band-structure calculations to be a half-metallic ferromagnet, were grown on various substrates (Si and InAs) using pulsed-laser deposition. The growth ...
    • Article  

      Time-resolved ultrafast carrier dynamics in as-grown nanocrystalline silicon films: The effect of film thickness and grain boundaries 

      Lioudakis, Emmanouil E.; Othonos, Andreas S. (2008)
      In this letter, we have studied transient photoinduced absorption in as-grown nanocrystallinc silicon films with thickness varied from 5 to 30 nm. Effects of quantum confinement (QC) in z-direction and grain boundary ...
    • Article  

      Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers: Effects of high fluence excitation 

      Lioudakis, Emmanouil E.; Othonos, Andreas S.; Dimakis, Emmanouil; Iliopoulos, Eleftherios; Georgakilas, A. (2006)
      Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers were investigated, using femtosecond transient differential transmission and reflection measurements for x=0.07, 0.15, and 0.33, over a fluence range of 1-12 mJ ...
    • Article  

      Zn3N2nanowires: Growth, properties and oxidation 

      Zervos, Matthew; Karipi, C.; Othonos, Andreas S. (2013)
      Zinc nitride (Zn3N2) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3via the reaction of Zn with NH3including H2between 500°C and 600°C. These exhibited an optical ...
    • Article  

      Zn3N2nanowires: Growth, properties and oxidation 

      Zervos, Matthew; Karipi, C.; Othonos, A. (2013)
      Zinc nitride (Zn3N2) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3via the reaction of Zn with NH3including H2between 500°C and 600°C. These exhibited an optical ...